s urface mount p ackage. p r oduc t s ummar y v ds s i d r ds (on) ( m ) max 20v 5a 27.5 @ v g s = 4.0v f e at ur e s s uper high dens e cell des ign for low r ds (on ). r ugged and reliable. 38 @ v g s = 2.5v s t s 8215 ab s olut e maximum r at ing s (t a =25 c unles s otherwis e noted) e s d p rotected. p arameter s ymbol limit unit drain-s ource voltage v ds v g ate-s ource voltage v g s 10 v drain c urrent-c ontinuous @ t j =25 c -p uls ed i d 5 24 1.25 a a a w i dm drain-s ource diode f orward c urrent i s maximum p ower dis s ipation p d operating j unction and s torage temperature r ange t j , t s t g -55 to 150 c t he r mal c har ac t e r is t ic s t hermal r es is tance, j unction-to-ambient r j a 100 /w c a a a a b 20 s ot 26 t op v iew s 1 d1/d2 s 2 g 1 d1/d2 g 2 1 2 3 6 5 4 g 1 d 1 s 1 g 2 d 2 s 2 1.25 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
e l e c t r ic al c har ac t e r is t ic s (t a 25 c unles s otherwis e noted) = p arameter s ymbol c ondition min typ max unit of f c har ac t e r is t ic s drain-s ource b reakdown voltage b v ds s = v g s 0v, i d 250ua = 20 v zero g ate voltage drain c urrent i ds s v ds 16v, v g s 0v = = 1 ua g ate-b ody leakage i g s s v g s 10v,v ds 0v = = 10 ua on c har ac t e r is t ic s b g ate t hres hold voltage v g s (th) v ds v g s , i d = 250ua = 0.5 v drain-s ource on-s tate r es is tance r ds (on) c m ohm v g s 4.0v, i d 5a = = 16 s f orward trans conductance f s g v ds 5.0v, i d 5a dy namic c har ac t e r is t ic s c input c apacitance c is s c r s s c os s output c apacitance r evers e trans fer c apacitance v ds =8v, v g s = 0v f =1.0mh z p f p f p f s wit c hing c har ac t e r is t ic s c turn-on delay time r is e time turn-off delay time t d(on) t r t d(of f ) t f v dd = 10v, i d = 1a, v g e n = 4.5v, r l = 10 ohm r g e n = 10 ohm ns ns ns ns 20 36 11 f all t ime = = 100 540 160 15 v g s 2.5v, i d 3a = = m ohm 38 total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =10v, i d = 5 a v g s =4v nc nc nc v ds =10v, i d =5a,v g s =4v nc v ds =10v, i d =5a,v g s =2.5v 6.4 2.8 1.1 4.6 0.9 30 1.5 23 27.5 s t s 8215 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
p arameter s ymbol c ondition min typ max unit e l e c t r ic al c har ac t e r is t ic s (t a =25 c unles s otherwis e noted) dr ain-s o ur c e dio de c har ac t e r is t ic s diode f orward voltage v s d v g s = 0v, is =1.25a 0.76 1.2 v b c notes c.g uaranteed by des ign, not s ubject to production tes ting. b.p uls e tes t:p uls e width 300us , duty c ycle 2%. a.s urface mounted on f r 4 b oard, t 10s ec. s t s 8215 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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